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參數資料
| 型號： | 2N2905AL |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SWITCHING SILICON TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 31K |
| 代理商： | 2N2905AL |
Chip Type 2C2907A
Geometry 0600
Polarity PNP
Data S heet No. 2C2907A
Generic Packaged Parts:
2N2905, 2N2905A, 2N2907,
2N2907A
Chip type
2C2907A
by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Product Summary:
Part Numbers:
2N2905,
2N2905A
,
2N2905AL
, 2N2907,
2N2907A
,
2N2907AUB
, SD2907A, SD2907AF, SQ2907A,
SQ2907AF, 2N3486, 2N3486A, 2N6987, 2N6989
APPLICATIONS:
Designed for gen-
eral purpose switching and amplifier
applications.
Features:
Radiation graphs available
Mechanical Specifications
Top
Al - 18 k min.
Au - 6.5 k nom.
4.0 mils x 4.0 mils
4.0 mils x 4.0 mils
8 mils nominal
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
20 mils x 20 mils
Silox Passivated
Metallization
Bonding Pad Size
Parameter
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 10 mA, I
B
= 0
I
C
= 10 μA, I
E
= 0
I
E
= 10 μA, I
C
= 0
V
CB
= 50 V, I
E
= 0
I
C
= 150 mA dc, V
CE
= 10 V
Min
60
60
5.0
---
100
Max
---
---
---
10
300
Unit
V dc
V dc
V dc
nA
---
Electrical Characteristics
T
A
= 25
o
C
相關PDF資料 |
PDF描述 |
|---|---|
| 2N2905 | Chip Type 2C2907A Geometry 0600 Polarity PNP |
| 2N2905AL | Type 2N2905AL Geometry 0600 Polarity PNP |
| 2N3498 | Type 2N3498 Geometry 5620 Polarity NPN |
| 2N3497 | Small Signal Transistors |
| 2N3498 | Small Signal Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2905AL_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N2905ALJ | 制造商: 功能描述: |
| 2N2905ALJAN | 制造商: 功能描述: |
| 2N2905ALJANTX | 制造商: 功能描述: 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N2905ALJTX | 制造商: 功能描述: 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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