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參數資料
| 型號： | 2N2906A |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | TO-18, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 263K |
| 代理商： | 2N2906A |
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2N2906A Information
Category Transistors
Class Transistors; Bipolar; Si PNP Low-Pwr HF
Type Bipolar; Si PNP Low-Power High Frequency
2N2906A Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 600m
Absolute Max. Power Diss. (W) : 400m
Maximum Operating Temp (шC) : 175х
I(CBO) Max. (A) : 10nШ
@V(CBO) (V) (Test Condition) :
h(FE) Min. Current gain. : 40
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 500m
@V(CE) (V) (Test Condition) : 10
f(T) Min. (Hz) Transition Freq : 200M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(fe) Min. SS Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
t(d) Max. (s) Delay time. : 10n
t(r) Max. (s) Rise time : 40n
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2N2906A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N2906A
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11/7/2009 1:52 AM
相關PDF資料 |
PDF描述 |
|---|---|
| 2N2906CECC | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2919A | 30 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-77 |
| 2N2994.MOD | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N2920.MOD | 30 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-77 |
| 2N2906AQF | 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2906A_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N2906A_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED |
| 2N2906ACSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N2906ADCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N2906AJ.TX.V | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
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