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參數資料
| 型號： | 2N2907A-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 453K |
| 代理商： | 2N2907A-BP |
2N2907
2N2907A
PNP Switching
Transistors
Features
High current (max.600mA)
Low voltage (max.60V)
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
2N2907
2N2907A
40
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current (DC)
600
mA
ICM
Peak Collector Current
800
mA
IBM
Peak Base Current
200
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
Ptot
Total power Dissipation
TA
≦25℃
TC
≦25℃
400
1.2
mW
W
RJC
Thermal Resistance, Junction to Case
146
K/W
RJA
Thermal Resistance, Junction to Ambient
350
K/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
ICBO
Collector cut-off current
(VCB=50Vdc, IE=0)
2N2907
(VCB=50Vdc, IE=0,TA=150
℃)
(VCB=50Vdc, IE=0)
2N2907A
(VCB=50Vdc, IE=0,TA=150
℃)
---
20
10
nAdc
uAdc
nAdc
uAdc
IEBO
Emitter Cut-off current
(IC=0, VEB=5.0Vdc)
---
50
nAdc
hFE
DC Current Gain
2N2907
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)*
(IC=500mAdc, VCE=10Vdc)*
35
50
75
100
30
300
hFE
DC Current Gain
2N2907A
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)*
(IC=500mAdc, VCE=10Vdc)*
75
100
50
300
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.209
.230
5.309
5.842
Φ
B
.178
.195
4.521
4.953
Φ
C
.170
.210
4.318
5.334
D
.50
.75
12.7
19.05
E
.100
2.54
ΦTYP
F
.028
.048
7.112
1.219
G
-----
.050
-----
1.27
H
.009
.031
0.229
0.787
J
44°
46°
44°
46°
K
.036
.046
0.914
1.168
L
.016
.021
0.406
0.533
TO-18
Revision: A
2011/01/01
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
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| 2N2907A-SQR-A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
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| 2N2907 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2913 | 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-77 |
| 2N2918 | 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-77 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2907AC1 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N2907AC3 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N2907ACECC | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO18 |
| 2N2907ACSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTORHIRELPNP60V0.6ALCC1 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1 制造商:SEMELAB 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:500mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N2907ACSM_09 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
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