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參數資料
| 型號： | 2N2920L |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 27K |
| 代理商： | 2N2920L |
6 Lake Street, Lawrence, MA 01841
03/98 REV: D
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
All Types
Units
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
70
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
30
Adc
Total Power Dissipation
@ TA = +25
0C (one section)
(1)
@ TA = +25
0C (both sections)
@ TC = +25
0C (one section)
(2)
@ TC = +25
0C (both sections)
PT
300
500
750
1.25
mW
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-55 to +175
0C
1)
For TA > +25
0C Derate linearly 2.0 mW/0C (one section); 3.33 mW/0C (both sections)
2)
For TC > +25
0C Derate linearly 5.0 mW/0C (one section); 8.33 mW/0C (both sections)
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 Adc
V(BR)CBO
70
Vdc
Collector-Emitter Breakdown Current
IC = 10 mAdc
V(BR)CEO
60
Vdc
Emitter-Base Breakdown Voltage
IE = 10 Adc
V(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
VCB = 45 Vdc
ICBO
2.0
ηAdc
Collector-Emitter Cutoff Current
VCE = 5.0 Vdc
ICEO
2.0
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
2.0
ηAdc
TECHNICAL DATA
2N2919 JTX, JTXV
2N2919L JTX, JTXV
2N2920 JTX, JTXV
2N2920L JTX, JTXV
Processed per MIL-PRF-19500/355
NPN SILICON SMALL-SIGNAL TRANSISTORS
TO-78
MIL-PRF
QPL
DEVICES
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2920U | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 0.03A Case U 制造商:Microsemi Corporation 功能描述:NPN DUAL TRANSISTORS U LAW - Bulk |
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| 2N2923 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2924 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2925 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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