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參數資料
型號: 2N3012.MOD
廠商: SEMELAB LTD
元件分類: 小信號晶體管
英文描述: 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
封裝: HERMETIC SEALED, METAL, TO-18, 3 PIN
文件頁數: 1/1頁
文件大小: 10K
代理商: 2N3012.MOD
2N3012
Bipolar PNP Device.
V
CEO =
12V
I
C = 0.2A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
12
V
I
C(CONT)
0.2
A
h
FE
@ 0.5/30m (V
CE / IC)
30
120
-
f
t
400M
Hz
P
D
0.36
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
TO18 (TO206AA)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
Bipolar PNP Device in a
Hermetically sealed TO18
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
相關PDF資料
PDF描述
2N3012 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
2N3019-JQR-BE4 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3019G4 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3019-JQR-B 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3019DCSMG4 1000 mA, 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB
相關代理商/技術參數
參數描述
2N3013 功能描述:兩極晶體管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3014 功能描述:兩極晶體管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3015 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors
2N3016 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 1A 3PIN TO-5 - Bulk
2N3017 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 5A 3PIN TO-5 - Bulk
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