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參數資料
| 型號： | 2N3019 |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 456K |
| 代理商： | 2N3019 |
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3019
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3019J)
JANTX level (2N3019JX)
JANTXV level (2N3019JV)
JANS level (2N3019JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/391
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
80
Volts
Collector-Base Voltage
VCBO
140
Volts
Emitter-Base Voltage
VEBO
7
Volts
Collector Current, Continuous
IC
1
A
Power Dissipation, TA = 25
OC
Derate linearly above 60OC
PT
0.8
5.7
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
5.0
28.6
W
mW/
°C
Thermal Resistance
RθJA
175
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
Semicoa Corporation.
Copyright
2010
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