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參數資料
| 型號： | 2N3055/7 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N3055/7 |
2N3055/7
Bipolar NPN Device.
V
CEO =
100V
I
C = 15A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
100
V
I
C(CONT)
15
A
h
FE
@ 4/3 (V
CE / IC)
15
70
-
f
t
0.8M
Hz
P
D
115
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3055A | 功能描述:兩極晶體管 - BJT 15A 60V 115W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3055A/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistor |
| 2N3055A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon High-Power Transistors |
| 2N3055AG | 功能描述:兩極晶體管 - BJT 15A 60V 115W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3055C | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:N-P-N SILICON POWER TRANSISTOR |
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