型號(hào): | 2N3110 |
英文描述: | NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
中文描述: | NPN硅自動(dòng)對(duì)焦中功率功放 |
文件頁(yè)數(shù): | 1/1頁(yè) |
文件大小: | 55K |
代理商: | 2N3110 |
相關(guān)PDF資料 |
PDF描述 |
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2N3072 | DIP Socket; No. of Contacts:42; Pitch Spacing:0.07"; Row Spacing:0.6"; Terminal Type:PC Board; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
2N3107 | DIP Socket; No. of Contacts:42; Pitch Spacing:0.07"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
2N3108 | DIP Socket; No. of Contacts:42; Pitch Spacing:0.07"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
2N3109 | MOUNTING TAPE VHB 3/8 X 36 YD |
2N3110 | DIP Socket; No. of Contacts:48; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:PC Board; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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2N3114 | 功能描述:兩極晶體管 - BJT NPN High Volt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
2N3114CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
2N3114CSM_09 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
2N3115 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
2N3116 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |