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參數(shù)資料
| 型號： | 2N3439UA |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UA, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 101K |
| 代理商： | 2N3439UA |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
T4-LDS-0134 Rev. 1 (091510)
Page 1 of 2
DEVICES
LEVELS
2N3439
2N3440
JANSM – 3K Rads (Si)
2N3439L
2N3440L
JANSD – 10K Rads (Si)
2N3439UA
2N3440UA
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N3439
2N3440
Unit
Collector-Emitter Voltage
VCEO
350
250
Vdc
Collector-Base Voltage
VCBO
450
300
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation
UA
@ TA = +25°C
(1)
@ TC = +25°C
(2)
@ TSP = +25°C
(3)
PT
0.8
5.0
2.0
W
Operating & Storage Temperature Range
Top , Tstg
-65 to +200
°C
1)
Derate linearly @ 4.57mW/°C for TA > +25°C
2)
Derate linearly @ 28.5mW/°C for TC > +25°C
3)
Derate linearly @ 14mW/°C for TSP > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Ma
x.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
RBB1 = 470Ω;VBB1 = 6V
L = 25mH (min); f = 30 – 60Hz
2N3439
2N3440
V(BR)CEO
350
250
Vdc
Collector-Emitter Cutoff Current
VCE = 300Vdc
VCE = 200Vdc
2N3439
2N3440
ICEO
2.0
Adc
Emitter-Base Cutoff Current
VEB = 7.0Vdc
IEBO
10
Adc
Collector-Emitter Cutoff Current
VCE = 450Vdc, VBE = -1.5Vdc
VCE = 300Vdc, VBE = -1.5Vdc
2N3439
2N3440
ICEX
5.0
Adc
Collector-Base Cutoff Current
VCB = 360Vdc
VCB = 250Vdc
VCB = 450Vdc
VCB = 300Vdc
2N3439
2N3440
2N3439
2N3440
ICBO
2.0
5.0
Adc
TO-5 *
2N3439L, 2N3440L
TO-39 * (TO-205AD)
2N3439, 2N3440
UA
2N3439UA, 2N3440UA
* See Appendix A for Package
Outline
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3439UAJANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 350V 1A 4-Pin UA 制造商:Microsemi 功能描述:Trans GP BJT NPN 350V 1A 4-Pin UA |
| 2N343A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 60MA I(C) | TO-11 |
| 2N343B | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:N-P-N GROWN-JUNCTION SILICON TRANSISTOR |
| 2N344 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 5V V(BR)CEO | 5MA I(C) | TO-24 |
| 2N344/C | 制造商:n/a 功能描述:2N344 RCA N7D4D |
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