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參數資料
| 型號： | 2N3440L |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN LOW POWER SILICON TRANSISTOR |
| 中文描述： | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 18K |
| 代理商： | 2N3440L |
7V
1A
0.5A
5W
1W
–55 to 200°C
200°C
2N3439
2N3440
Prelim.12/99
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HIGH VOLTAGE
APPLICATIONS:
These devices are particularly suited as dri-
vers in high-voltage low current inverters,
switing and series regulators.
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Power Dissipation at T
case
￡
25°C
T
amb
￡
50°C
T
stg
T
j
Storage Temperature
Junction Temperature
450V
350V
300V
250V
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
2N3439
2N3440
Semelab plc.
Telephone +44(0)1455 556565.
E-mail:
sales@semelab.co.uk
Fax +44(0)1455 552612.
Website:
(0.890.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
TO39 PACKAGE
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3439CSM4 | HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N3440 | HIGH VOLTAGE NPN TRANSISTORS |
| 2N3442 | POWER TRANSISTORS |
| 2N4347 | HIGH-POWER INDUSTRIAL TRANSISTORS |
| 2N3442 | HIGH-POWER INDUSTRIAL TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3440MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-39 |
| 2N3440S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-39 |
| 2N3440UA | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| 2N3441 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 3A 3PIN TO-66 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:100; Operating Temperature Min:-65C; Operating Temperature Max:200C;RoHS Compliant: Yes |
| 2N3442 | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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