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參數資料
| 型號： | 2N3496 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | TO-18, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 232K |
| 代理商： | 2N3496 |
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2N3496 Availability
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2N3496 Information
Category Transistors
2N3496 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 80
V(BR)CBO (V) : 80
I(C) Max. (A) : 100m
Absolute Max. Power Diss. (W) : 400m
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : .10uШ
@V(CBO) (V) (Test Condition) :
h(FE) Min. Current gain. :
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 200M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(fe) Min. SS Current gain. : 40у
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 10
@Freq. (Hz) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. : 300n
t(s) Max. (s) Storage tim e. : 1.0uА
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-18
Mounting Style : T
Description :
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133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright 2004 A merican Microsemiconductor Inc. A ll Rights Reserved.
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相關代理商/技術參數 |
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| 2N3497 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3498 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR TO-39 LAW - Bulk |
| 2N3498_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED |
| 2N3498L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 100V 0.5A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 0.5A 3PIN TO-5 - Bulk |
| 2N3499 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR TO-39 LAW - Bulk |
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