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參數資料
| 型號： | 2N3583 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封裝： | HERMETIC SEALED, METAL, TO-66, 2 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N3583 |
2N3583
Bipolar NPN Device.
V
CEO =
175V
I
C = 1A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
175
V
I
C(CONT)
1
A
h
FE
@ 10/0.75 (V
CE / IC)
40
200
-
f
t
10M
Hz
P
D
35
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO66 (TO213AA)
PINOUTS
1 – Base
2 – Emitter
Case – Collector
Bipolar NPN Device in a
Hermetically sealed TO66
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
24.13
(0.95)
24.63
(0.97)
14.48
(0.570)
14.99
(0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71
(0.028)
0.86
(0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94
(0.470)
12.70
(0.500)
1
2
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3583R1 | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N3583.MODR1 | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N3583 | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3584 | 5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3585 | 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3583 LEADFREE | 功能描述:兩極晶體管 - BJT NPN High Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3583_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS. |
| 2N3584 | 功能描述:兩極晶體管 - BJT NPN High Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3584 | 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-66 |
| 2N3584JAN | 制造商:Microsemi Corporation 功能描述: |
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