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參數資料
| 型號： | 2N3632 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60 |
| 封裝： | TO-60, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | 2N3632 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
40
V
BVCEX
IC = 200 mA
VBE = -1.5 V
65
V
BVCBO
IC = 500
A65
V
ICEO
VCE = 30 V
250
A
IEBO
VEB = 4.0 V
250
A
hFE
VCE = 5.0 V
IC = 1.0 A
5.0
---
Cob
VCB = 30 V
f = 1.0 MHz
20
pF
ft
VCE = 28 V
IC = 150 mA
f = 100 MHz
400
MHz
Pout
GP
ηηηη
C
VCE = 28 V
f = 175 MHz
13.5
5.8
70
W
dB
%
NPN SILICON RF POWER TRANSISTOR
2N3632
PACKAGE STYLE TO- 60
1 = EMITTER
2 = BASE
3 = COLLECTOR
CASE = EMITTER
DESCRIPTION:
The
ASI 2N3632 is Designed for
Class A,B,C Amplifier, Oscillator and
Driver Applications Covering 130 to
400 MHz.
FEATURES INCLUDE:
Emitter Ballasted
Common Emitter Package
MAXIMUM RATINGS
IC
3.0 A
VCE
40 V
PDISS
23 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
7.6
OC/W
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相關代理商/技術參數 |
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| 2N3633 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 50MA I(C) | TO-18 |
| 2N3634 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-39 - Bulk 制造商: 功能描述: 制造商:MINNESOTA MINING AND MFG 功能描述: 制造商:undefined 功能描述: |
| 2N3634_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED |
| 2N3634_2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON SWITCHING TRANSISTOR |
| 2N3634CSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
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