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參數(shù)資料
型號: 2N3700
廠商: 意法半導體
英文描述: GENERAL PURPOSE AMPLIFIERS
中文描述: 通用放大器
文件頁數(shù): 1/2頁
文件大小: 22K
代理商: 2N3700
2N3700DCSM
LAB
SEME
Semelab plc.
Telephone (01455) 556565.Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
HIGH VOLTAGE, MEDIUM POWER,NPN
DUAL TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH VOLTAGE
APPLICATIONS:
Dual Hermetically sealed surface mount ver-
sion of the popular 2N3700 for high reliability/
space applications requiring small size and
low weight devices.
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
P
D
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
B
= 0)
Collector Current
Per Device Dissipation
Total Device Dissipation
Derate above 25°C (Per Device)
(Total)
R
ja
T
stg
Thermal Resistance Junction to Ambient
Storage Temperature
140V
80V
7V
1A
350mW
525mW
2mW / °C
3mW/°C
240°C/W
–65 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
5
6
6.22 ± 0.13
(0.245 ± 0.005)
2
(
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
(01.40 ± 0.15
4
(
0
(
(0.23
rad.
A =
2N3700
相關PDF資料
PDF描述
2N3700 GENERAL TRANSISTOR NPN SILICON
2N3700 Small Signal Transistors
2N3700 NPN BIPOLAR TRANSISTOR
2N3700 Type 2N3700 Geometry 4500 Polarity NPN
2N3700UB Type 2N3700UB Geometry 4500 Polarity NPN
相關代理商/技術參數(shù)
參數(shù)描述
2N3700 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR NPN 80V TO-18
2N3700_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:General purpose amplifiers
2N37000UBSW 制造商:STMicroelectronics 功能描述:
2N3700CSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN TRANSISTOR
2N3700DCSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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