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參數資料
型號: 2N3715SMDR4
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
封裝: HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
文件頁數: 1/1頁
文件大?。?/td> 10K
代理商: 2N3715SMDR4
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14
(0.16
3
)
3.84
(0.15
1
)
10.69
(0.4
21)
10.39
(0.4
09)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02
(0.6
31)
15.73
(0.6
19)
0.50 (0.020)
0.26 (0.010)
0.76
(0
.030)
min.
13
2
2N3715SMD
Bipolar NPN Device.
V
CEO =
60V
I
C = 10A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
60
V
I
C(CONT)
10
A
h
FE
@ 2/1 (V
CE / IC)
50
150
-
f
t
4M
Hz
P
D
150
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar NPN Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD1 (TO276AB)
相關PDF資料
PDF描述
2N3715 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3716XR1 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N3716X 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N3716 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3716 80 V, NPN, Si, POWER TRANSISTOR, TO-3
相關代理商/技術參數
參數描述
2N3715X 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-204AA
2N3716 功能描述:兩極晶體管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3716 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-3
2N3716J 制造商: 功能描述: 制造商:Texas Instruments 功能描述:
2N3716JANTX 制造商:Microsemi Corporation 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
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