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參數資料
| 型號： | 2N3735 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 199K |
| 代理商： | 2N3735 |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3735
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3735J)
JANTX level (2N3735JX)
JANTXV level (2N3735JV)
JANS level (2N3735JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0806
Reference document:
MIL-PRF-19500/395
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Collector-Base Voltage
VCBO
75
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
1.5
A
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
1
5.71
W
mW/
°C
Power Dissipation, TC = 25°C
Derate linearly above 25
°C
PT
2.9
16.6
W
mW/
°C
Thermal Resistance
RθJA
RθJC
175
.06
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
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