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參數資料
| 型號： | 2N3739 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封裝： | TO-66, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | 2N3739 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/402
Devices
Qualified Level
2N3739
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Collector-Base Voltage
VCBO
325
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Base Current
IB
0.5
Adc
Collector Current
IC
1.0
Adc
Total Power Dissipation
@ TC = 25
0C
@ TC = 100
0C
PT
20
10
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-55 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
7.5
0C/W
1) Derate linearly 0.114 W/
0C for TC
≥ 250C
2) Derate linearly 0.100 mW/
0C for TC
≥ 1000C
TO-66 (TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 5.0 mAdc
V(BR)CEO
300
Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
0.1
mAdc
Collector-Emitter Cutoff Current
VCE = 325 Vdc, VBE = 1.5 Vdc
ICEX
0.5
mAdc
Collector-Base Cutoff Current
VCB = 325 Vdc
ICBO
0.1
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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| 2N3739JANTX | 制造商:Freescale Semiconductor 功能描述: 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N3739JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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| 2N3740 | 功能描述:兩極晶體管 - BJT Leaded Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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