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參數(shù)資料
| 型號： | 2N3772-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 91K |
| 代理商： | 2N3772-BP |
TO-3
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
NOTE
A
1.550
REF
39.37
REF
B
-----
1.050
-----
26.67
C
.250
.335
6.35
8.51
D
.038
.043
0.97
1.09
E
.055
.070
1.40
1.77
G
.430
BSC
10.92
BSC
H
.215
BSC
5.46
BSC
K
.440
.480
11.18
12.19
L
.665
BSC
16.89
BSC
N
-----
.830
-----
21.08
Q
.151
.165
3.84
4.19
Dia.
U
1.187
BSC
30.15
BSC
V
.131
.188
3.33
4.77
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCESM
Collector-emitter voltage peak value
VBE=0V
80
V
VCEO
Collector-emitter voltage (open base)
60
V
VEBO
Emitter-base voltage (open collector)
7
V
IC
Collector current (DC)
20
A
IB
Base current(DC)
5
A
IBM
Base current peak value
A
PTOT
Total power dissipation
Tmb<=25
o
C
150
W
Tstg
Storage temperature
-65
200
o
C
Tj
Junction temperature
-65
200
o
C
ELECTRICAL CHARACTERISTICS
SYSBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
ICBO
Collector-base cut-off current
VCB=100V; I E =0
5
mA
IEBO
Emitter-base cut-off current
VEB =7V; I C=0
5
mA
V(BR)CEO
Collector-emitter breakdown voltage
IC=200mA; IB=0
60
V
VCEsat
Collector-emitter saturation voltages
IC=10A; IB =1.0A
1.4
V
hFE
DC current gain
IC=10A; VCE =4V
15
60
fT
Transition frequency at f=1MHz
IC=1.0A; VCE=4V
0.2
MHz
CC
Collector capacitance at f=1MHz
VCB=10V
pF
ton
On times
IB1=-IB2=1A;
IC=10A; VCC=30V
1
us
ts
Turn-off storage time
IB1=-IB2=1A;
IC=10A; VCC=30V
1
us
tf
Fall time
IB1=-IB2=1A;
IC=10A; VCC=30V
0.5
us
2N3772
NPN
Silicon Diffused
Power Transistor
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
VCESM
Collector-emitter voltage peak value
VBE=0V
80
V
VCEO
Collector-emitter voltage (open base)
60
V
IC
Collector current (DC)
20
A
ICM
Collector current peak value
30
A
PTOT
Total power dissipation
Tmb<=25
o
C
150
W
VCEsat
Collector -emitter saturation voltage
IC=10A;
IB=1.0A
1.4
V
Icsat
Collector saturation current
A
VBE
Emitter forward voltage
IE=10A
2.2
V
tf
Fall time
IC=10A;
IB1=-IB2=1.0A;
ICC=30V
0.5
us
Note: Drawings Are Not To Scale
A
N
E
D
C
K
H
V
U
L
G
B
Q
1
2
PIN 1:
ANODE
PIN 2:
ANODE
CASE:
CATHODE
www.mccsemi.com
Revision: 2
2003/04/30
omponents
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Street Chatsworth
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3772G | 功能描述:兩極晶體管 - BJT 20A 60V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3772G-T30-Y | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON NPN TRANSISTORS |
| 2N3772JANTX | 制造商:Microsemi Corporation 功能描述:MIL SPEC IC |
| 2N3772L-T30-Y | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON NPN TRANSISTORS |
| 2N3773 | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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