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參數資料
| 型號： | 2N3772 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-204AA, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2N3772 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N3771
2N3772
Units
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCBO
50
100
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
7.5
5.0
Adc
Collector Current
IC
30
20
Adc
Total Power Dissipation @ TA = 25
0C (1)
@ TC = 25
0C (2)
PT
6.0
150
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
1) Derate linearly 34.2 mW/
0C for TA > 250C
2) Derate linearly 857 mW/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 200 mAdc
2N3771
2N3772
V(BR)CEO
40
60
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBE = 100
2N3771
2N3772
V(BR)CER
45
70
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, VBE = -1.5 Vdc
2N3771
2N3772
V(BR)CEX
50
90
Vdc
Collector-Emitter Cutoff Current
VCE = 30 Vdc
2N3771
VCE = 50 Vdc
2N3772
ICEO
5.0
mAdc
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
2N3771
2N3772
IEBO
2.0
mAdc
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc, VCE = 50 Vdc
2N3771
VBE = 1.5 Vdc, VCE = 100 Vdc
2N3772
ICEX
500
Adc
TECHNICAL DATA
TO-3 (TO-204AA)
2N3771 JANTX, JTXV
2N3772 JANTX, JTXV
Processed per MIL-PRF-19500/413
NPN HIGH-POWER SILICON TRANSISTORS
MIL-PRF
QPL
DEVICES
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PDF描述 |
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| 2N3789XSMD-JQR-A | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
| 2N3789XSMD-JQRR4 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
| 2N3789XSMD.MODR4 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3772 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3772_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON NPN TRANSISTORS |
| 2N37729050 | 制造商:n/a 功能描述:2N3772 |
| 2N3772G | 功能描述:兩極晶體管 - BJT 20A 60V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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