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參數資料
| 型號： | 2N3773 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Power Transistor(16A,140V（集電極-發射極）,150W，補償型，硅NPN功率晶體管) |
| 中文描述： | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 2N3773 |
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 10
1
Publication Order Number:
2N3773/D
NPN 2N3773*, PNP 2N6609
Preferred Device
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DCDC converters or
inverters.
Features
PbFree Packages are Available**
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
h
FE
= 15 (Min) @ 8.0 A, 4.0 V
V
CE(sat)
= 1.4 V (Max) @ I
C
= 8.0 A, I
B
= 0.8 A
For Low Distortion Complementary Designs
MAXIMUM RATINGS
(Note 1)
Rating
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
V
CEX
V
CBO
V
EBO
I
C
140
Vdc
Collector Emitter Voltage
160
Vdc
Collector Base Voltage
160
Vdc
Emitter Base Voltage
7
Vdc
Collector Current
Continuous
Peak (Note 2)
16
30
Adc
Base Current
Continuous
Peak (Note 2)
I
B
4
15
Adc
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
150
0.855
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoCase
R
JC
1.17
°
C/W
**For additional information on our PbFree strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO204
CASE 107
*Preferred
devices are recommended choices for future
use and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING
DIAGRAM
16 A COMPLEMENTARY
POWER TRANSISTORS
140 V, 150 W
2Nxxxx
MEX
AYYWW
xxxx
A
YY
WW
= 3773 or 6609
= Assembly Location
= Year
= Work Week
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3773 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3773 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N3773/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon Power Transistor |
| 2N3773_04 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| 2N3773_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High power NPN transistor |
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