- 您現在的位置：買賣IC網 > PDF目錄366217 > 2N3866UB (Semicoa Semiconductor) Silicon NPN Transistor PDF資料下載
參數資料
| 型號： | 2N3866UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 240K |
| 代理商： | 2N3866UB |
Copyright
2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 1 of 2
2N3866UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3866UBJ)
JANTX level (2N3866UBJX)
JANTXV level (2N3866UBJV)
JANS level (2N3866UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.
SEMICOA
.com or (714) 979-1900
Applications
General purpose high frequency
VHF-UHF amplifier transistor
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 1008
Reference document:
MIL-PRF-19500/398
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise specified
Rating
30
60
Parameter
Symbol
V
CEO
V
CBO
Unit
Volts
Volts
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
EBO
3.5
Volts
Collector Current, Continuous
Power Dissipation, T
A
= 25
°
C
Derate linearly above 25
°
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
I
C
400
0.5
2.86
mA
P
T
W
mW/
°
C
°
C/W
R
θ
JA
T
J
T
STG
325
-65 to +200
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3866 | Chip Type 2C3866A Geometry 1007 Polarity NPN |
| 2N3866AUB | Chip Type 2C3866A Geometry 1007 Polarity NPN |
| 2N3904 | Small Signal Transistors (NPN)(應用于開關和放大器的小信號晶體管（NPN）) |
| 2N3906SU | Epitaxial Planar PNP Transistor(General Application,Switching Application)(外延平面PNP晶體管（通用型，開關應用）) |
| 2N3918 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3867 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 3A 3PIN TO-5 - Bulk 制造商:undefined 功能描述: |
| 2N3867_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3867S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 3A 3PIN TO-39 - Bulk 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N3867SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
| 2N3868 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 3A 3PIN TO-5 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR, PNP, 80V, 1A, TO-205AD-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:7W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 |
發布緊急采購，3分鐘左右您將得到回復。