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參數資料
| 型號： | 2N3906/E6 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 37K |
| 代理商： | 2N3906/E6 |
2N3906
Vishay Semiconductors
formerly General Semiconductor
Document Number 88114
www.vishay.com
07-May-02
1
New Product
Small Signal Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
2N3904 is recommended.
On special request, this transistor is also
manufactured in the pin configuration TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT3906.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
–VCEO
40
V
Collector-Base Voltage
–VCBO
40
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current
–IC
200
mA
Power Dissipation
TA = 25°C
Ptot
625
mW
TC = 25°C
1.5
W
Thermal Resistance Junction to Ambient Air
R
ΘJA
250(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Valid provided that leads are kept at ambient temperature.
0.181 (4.6)
m
in
.0.492
(12.5
)
0.1
81
(4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
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| 2N3906CSM-SQR-A | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3906CSM | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3906O-BP | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N3906G | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N3906Y-BP | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3906G | 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3906-G | 功能描述:二極管 - 通用，功率，開關 -40V -200mA TO-92 RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 2N3906G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N3906GE8487 | 制造商:GE 功能描述:2N3906 |
| 2N3906G-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
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