- 您現在的位置：買賣IC網 > PDF目錄369021 > 2N4119A (Vishay Intertechnology,Inc.) N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流200μA的N溝道結型場效應管) PDF資料下載
參數資料
| 型號： | 2N4119A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流200μA的N溝道結型場效應管) |
| 中文描述： | N溝道場效應（最小柵源擊穿電壓- 40V的，最小飽和漏極電流為200μA的N溝道結型場效應管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 62K |
| 代理商： | 2N4119A |
2N/PN/SST4117A Series
Siliconix
S-52424—Rev. E, 14-Apr-97
1
N-Channel JFETs
2N4117A
2N4118A
2N4119A
PN4117A
PN4118A
PN4119A
SST4117
SST4118
SST4119
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min ( A)
4117
–0.6 to –1.8
–40
70
30
4118
–1 to –3
–40
80
80
4119
–2 to –6
–40
100
200
Features
Ultra-Low Leakage: 0.2 pA
Very Low Current/Voltage Operation
Ultrahigh Input Impedance
Low Noise
Benefits
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
Applications
High-Impedance Transducer
Amplifiers
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
Description
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military
processing
per
MIL-S-19500
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
(see
Military
G
S
TO-206AF
(TO-72)
D
Top View
2N4117A
2N4118A
2N4119A
C
1
2
3
4
D
G
Top View
PN4117A
PN4118A
PN4119A
TO-226AA
(TO-92)
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70239.
Applications information may also be obtained via FaxBack, request document #70598.
相關PDF資料 |
PDF描述 |
|---|---|
| 2N4118A | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流80μA的N溝道結型場效應管) |
| 2N4117A | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流30μA的N溝道結型場效應管) |
| 2N4123 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2N4123 | Small Signal Transistors |
| 2N4123 | NPN EPITAXIAL SILICON TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N4119A_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4119A-2 | 制造商:Vishay Siliconix 功能描述:SS SOT23 GP XSTR NPN 65V - Bulk |
| 2N4119A-E3 | 功能描述:JFET 40V 0.2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15MA I(C) | TO-1 |
| 2N4120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20MA I(D) | TO-72 |
發布緊急采購，3分鐘左右您將得到回復。