
01/99
2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A
N-Channel Silicon Junction Field-Effect Transistor
Mixers
Oscillators
VHF Amplifiers
Small Signal Amplifiers
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 30 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating (to 150 °C)
2 mW/°C
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
2N4220
2N4221
2N4222
2N4220A
2N4221A
2N4222A
At 25°C free air temperature:
Process
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 30
V
IG = – 1A, VDS = V
Gate Reverse Current
IGSS
– 0.1
nA
VGS = – 15V, VDS = V
– 0.1
A
VGS = – 15V, VDS = V
TA = 150°C
Gate Source Voltage
VGS
– 0.5
– 2.5
– 1
– 5
– 2
– 6
V
VDS = 15V, ID = ( )
(50)
(200) (200) (500) (500)
A
Gate Source Cutoff Voltage
VGS(OFF)
– 4– 6– 8
V
VDS = 15V, ID = 0.1 nA
Drain Saturation Current (Pulsed)
IDSS
0.5
3265
15
mA
VDS = 15V, VGS = V
Dynamic Electrical Characteristics
Common Source Forward
gfs
1000
4000
2000
5000
2500
6000
S
VDS = 15V, VGS = V
f = 1 kHz
Transconductance
Common Source Forward Transmittance
| Yfs |
750
S
VDS = 15V, VGS = V
f = 100 MHz
Common Source Output Conductance
gos
10
20
40
S
VDS = 15V, VGS = V
f = 1 kHz
Common Source Input Capacitance
Ciss
666
pF
VDS = 15V, VGS = V
f = 1 MHz
Common Source Reverse
Crss
222
pF
VDS = 15V, VGS = V
f = 1 MHz
Transfer Capacitance
Noise Figure
NF
2.5
dB
VDS = 15V, VGS = V
f = 100 MHz
2N4220A, 2N4221A, 2N4222A
RG = 1 M
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-10