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參數(shù)資料
| 型號(hào)： | 2N4232 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power Transistors |
| 中文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N4232 |
2N4232
Bipolar NPN Device.
V
CEO
= 60V
I
C
= 5A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
60
V
I
C(CONT)
5
A
h
FE
@ 2/1.5 (V
CE
/ I
C
)
25
100
-
f
t
4M
Hz
P
D
35
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO66 (TO213AA)
PINOUTS
1 – Base
2 – Emitter
Case – Collector
Bipolar NPN Device in a
Hermetically sealed TO66
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
2
2
1
1
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0
0
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
1
1
1
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4232A | FILTER, CAPACITIVE, 1000PF; Attenuation, 1 GHz:28dB; Attenuation, 10 MHz:5dB; Attenuation, 100 MHz:21dB; Capacitance:1000pF; Current rating:10A; Diameter, PCB hole:5.4mm; Diameter, body:6.35mm; Diameter, lead:1.29mm; Length / Height |
| 2N5606 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
| 2N4234 | COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
| 2N4235 | COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
| 2N4237 | COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4232A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 5A 3PIN TO-66 - Bulk |
| 2N4233 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 5A 3PIN TO-66 - Bulk |
| 2N4233A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 5A 3PIN TO-66 - Bulk |
| 2N4234 | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4235 | 功能描述:兩極晶體管 - BJT PNP Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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