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參數資料
| 型號： | 2N4236X |
| 英文描述： | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 中文描述： | 5個引腳µ帶看門狗和手動復位的P監控電路 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N4236X |
2N4236X
Bipolar PNP Device.
V
CEO
= 80V
I
C
= 3A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
80
V
I
C(CONT)
3
A
h
FE
@ 1/0.25 (V
CE
/ I
C
)
30
175
-
f
t
3M
Hz
P
D
6
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar PNP Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
(0.89
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
(2.54
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
相關PDF資料 |
PDF描述 |
|---|---|
| 2N4239X | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-39 |
| 2N4236 | GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
| 2N4236 | Small Signal Transistors |
| 2N4239 | GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
| 2N4239 | Small Signal Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N4237 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4238 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4239 | 功能描述:兩極晶體管 - BJT NPN Power Ampl RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4239X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-39 |
| 2N424 | 制造商:TI 功能描述:2N424 |
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