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參數資料
| 型號： | 2N4264RLRM |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數： | 1/25頁 |
| 文件大小： | 388K |
| 代理商： | 2N4264RLRM |
2–22
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
15
Vdc
Collector – Base Voltage
VCBO
30
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
350
2.8
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
15
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
30
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Base Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)
IBEV
—
0.1
10
Adc
Collector Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
ICEX
—
100
nAdc
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N4264
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
REV 2
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相關代理商/技術參數 |
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