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參數資料
| 型號： | 2N4338 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Junction FETs Low Frequency/ Low Noise |
| 中文描述： | 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 19K |
| 代理商： | 2N4338 |
N-Channel JFET
Low Noise Amplifier
2N4338 – 2N4341
FEATURES
Exceptionally High Figure of Merit
Radiation Immunity
Extremely Low Noise and Capacitance
High Input Impedance
APPLICATIONS
Low-level Choppers
Data Switches
Multiplexers and Low Noise Amplifiers
ABSOLUTE MAXIMUM RATINGS
(TA = 25
oC unless otherwise noted)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +175oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N4338-41
Hermetic TO-18
-55
oC to +175oC
X2N4338-41
Sorted Chips in Carriers
-55
oC to +175oC
CORPORATION
PIN CONFIGURATION
S
TO-18
G,C
D
ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETER
2N4338
2N4339
2N4340
2N4341
UNITS
TEST CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
IGSS
Gate Reverse Current
-0.1
nA
VGS = -30V, VDS = 0
TA = 150
oC
-0.1
A
BVGSS
Gate-Source Breakdown Voltage
-50
V
IG = -1
A, VDS = 0
VGS(off)
Gate-Source Cutoff Voltage
-0.3
-1
-0.6
-1.8
-1
-3
-2
-6
VDS = 15V, ID = 0.1
A
ID(off)
Drain Cutoff Current
0.05
(-5)
0.05
(-5)
0.05
(-5)
0.07
(-10)
nA
(V)
VDS = 15V,
VGS = ( )
IDSS
Saturation Drain Current (Note 2)
0.2
0.6
0.5
1.5
1.2
3.6
3
9
mA
VDS = 15V, VGS = 0
gfs
Common-Source Forward
Transconductance (Note 2)
600 1800 800 2400 1300 3000 2000 4000
S
VDS = 15V,
VGS = 0
f = 1kHz
gos
Common-Source Output Conductance
5
15
30
60
rDS(on)
Drain-Source ON Resistance
2500
1700
1500
800
ohm
VDS = 0, IDS = 0
Ciss
Common-Source Input Capacitance
7777
pF
VDS = 15V,
VGS = 0 (Note 1)
f = 1MHz
Crss
Common-Source Reverse Transfer
Capacitance
3333
NF
Noise Figure (Note 1)
1111
dB
VDS = 15V,
VGS = 0
Rgen = 1meg,
BW = 200Hz
f = 1kHz
NOTES: 1. For design reference only, not 100% tested.
2. Pulse test duration 2ms (non-JEDEC Condition).
5010
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N4338 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-18 |
| 2N4338-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-18 - Bulk |
| 2N4338-41 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Low Noise Amplifier |
| 2N4338-E3 | 功能描述:JFET 50V 0.6mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4339 | 功能描述:JFET 50V 1.5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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