- 您現在的位置：買賣IC網 > PDF目錄33248 > 2N4341 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 PDF資料下載
參數資料
| 型號： | 2N4341 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 92K |
| 代理商： | 2N4341 |
01/99
2N4340, 2N4341
N-Channel Silicon Junction Field-Effect Transistor
Small Signal Amplifiers
Current Regulators
Voltage-Controlled Resistors
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 50 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
300 mW
Power Derating (to 175°C)
2mW/°C
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMP4340, SMP4341
At 25°C free air temperature:
2N4340
2N4341
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 50
V
IG = – 1 A, VDS = V
Gate Reverse Current
IGSS
– 100
pA
VGS = – 30V, VDS = V
– 100
nA
VGS = – 30V, VDS = V
TA = 150°C
Gate Source Cutoff Voltage
VGS(OFF)
– 1– 3– 2– 6
V
VDS = 15V, ID = 0.1 A
Drain Saturation Current (Pulsed)
IDSS
1.2
3.6
3
9
mA
VDS = 15V, VGS = V
Drain Cutoff Current
ID(OFF)
0.05
0.07
nA
VDS = 15V, VGS = ( )
(– 5)
(– 10)
V
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
1500
800
VGS = V, ID = A
f = 1 kHz
Common Source
gfs
1300 3000 2000 4000
S
VDS = 15V, VGS = V
f = 1 kHz
Forward Transconductance
Common Source Output Conductance
gos
30
60
S
VDS = 15V, VGS = V
f = 1 kHz
Common Source Input Capacitance
Ciss
77
pF
VDS = 15V, VGS = V
f = 1 MHz
Common Source
Crss
33
pF
VDS = 15V, VGS = V
f = 1 MHz
Reverse Transfer Capacitance
Noise Figure
NF
1
dB
VDS = 15V, VGS = V
f = 1 kHz
RG = 1 M, BW = 200 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-12
相關PDF資料 |
PDF描述 |
|---|---|
| 2N4347 | 5 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3055HV | 15 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6371 | 12 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6371HV | 15 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N4348 | 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N4341-E3 | 功能描述:JFET 50V 3.6mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4342 | 制造商:Motorola 功能描述:2N4342 TO92 MOT N3E7D 制造商:Solid Technology Solutions 功能描述: 制造商:SSI 功能描述: |
| 2N4343 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:LOW NOISE VOLTAGE |
| 2N4347 | 制造商:Harris Corporation 功能描述: 制造商:UNK 功能描述: |
| 2N4348 | 制造商:SAB 功能描述:Bipolar Junction Transistor, NPN Type, TO-3 制造商:WESTINGHOUSE 功能描述:Bipolar Junction Transistor, NPN Type, TO-3 |
發布緊急采購，3分鐘左右您將得到回復。