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參數(shù)資料
| 型號： | 2N4403-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 233K |
| 代理商： | 2N4403-BP |
2N4403
PNP General
Purpose Amplifier
TO-92
Features
Through Hole Package
Capable of 600mWatts of Power Dissipation
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=-1.0mAdc, IB=0)
-40
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10
Adc, IE=0)
-40
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10
Adc, IC=0)
-5.0
Vdc
IBL
Base Cutoff Current
(VCE=-30Vdc, VBE=-3.0Vdc)
-0.1
Adc
ICEX
Collector Cutoff Current
(VCE=-30Vdc, VBE=-3.0Vdc)
-0.1
Adc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=-0.1mAdc, VCE=-1.0Vdc)
(IC=-1.0mAdc, VCE=-1.0Vdc)
(IC=-10mAdc, VCE=-1.0Vdc)
(IC=-150mAdc, VCE=-2.0Vdc)
(IC=-500mAdc, VCE=-2.0Vdc)
30
60
100
300
20
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
-0.4
-0.75
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
-0.75
-0.95
-1.30
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-20mAdc, VCE=-10Vdc, f=100MHz)
200
MHz
Ccb
Output Capacitance
(VCB=-10Vdc, IE=0, f=140kHz)
8.5
pF
Ceb
Input Capacitance
(VEB=-0.5Vdc, IC=0, f=140kHz)
30.0
pF
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=-3.0Vdc, VBE=-2.0Vdc
15
ns
tr
Rise Time
IC=-150mAdc, IB1=-15mAdc)
20
ns
ts
Storage Time
(VCC=-3.0Vdc, IC=-150mAdc
225
ns
tf
Fall Time
IB1=IB2=-15mAdc)
30
ns
*Pulse Width
≤ 300s, Duty Cycle ≤ 2.0%
A
E
B
C
D
G
Revision: A
2011/01/01
omponents
20736 Marilla
Street Chatsworth
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MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
TM
Micro Commercial Components
www.mccsemi.com
1 of 4
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking:Type number
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
E
B
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4403BU | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4403-BULKS | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4403G | 功能描述:兩極晶體管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4403G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N4403L-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
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