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參數資料
| 型號： | 2N4868A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 63K |
| 代理商： | 2N4868A |
01/99
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 40 V
Gate Current
50 mA
Continuous Device Power Dissipation
300mW
Power Derating
1.7 mW/°C
Storage Temperature Range
– 65°C to + 200°C
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A
2N4867
2N4868
2N4869
At 25°C free air temperature:
2N4867A
2N4868A
2N4869A
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 40
V
IG = – 1A, VDS = V
Gate Reverse Current
IGSS
– 0.25
nA
VGS = – 30V, VDS = V
– 0.25
A
VGS = – 30V, VDS = V
TA = 150°C
Gate Source Cutoff Voltage
VGS(OFF)
– 0.7
– 2
– 1
– 3
– 1.8
– 5
V
VDS = 20V, ID = 1 A
Drain Saturation Current (Pulsed)
IDSS
0.4
1.2
1
3
2.5
7.5
mA
VDS = 20V, VGS = V
Dynamic Electrical Characteristics
Common Source Forward
gfs
700
2000
1000
3000
1300
4000
S
VDS = 20V, VGS = V
f = 1 kHz
Transconductance
Common Source Output Conductance
gos
1.5
4
10
S
VDS = 20V, VGS = V
f = 1 kHz
Common Source Input Capacitance
Ciss
25
pF
VDS = 20V, VGS = V
f = 1 MHz
Common Source Reverse
Crss
555
pF
VDS = 20V, VGS = V
f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit
eN
20
nV/
√HZ
VDS = 10V, VGS = V
f = 10 Hz
Input Noise Voltage
10
nV/
√HZ
VDS = 10V, VGS = V
f = 1 kHz
VDS = 10V, VGS = V
f = 1 kHz
Noise Figure
NF
1
dB
(2N4867, 68, 69) RG = 20 k
(2N4867A, 68A, 69A) RG = 5 k
Audio Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/14/99 12:00 PM
Page B-17
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N4869 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
| 2N4869A | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
| 2N4870 | 功能描述:兩極晶體管 - BJT P-N UNIJUNCTION RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4871 | 制造商:SPC Multicomp 功能描述:TRANSISTOR UNIJUNCTION 制造商:SPC Multicomp 功能描述:TRANSISTOR, UNIJUNCTION 制造商:SPC Multicomp 功能描述:UNIJUNC TRANSISTOR, 0.3W 50mA TO-92; Repetitive Peak Forward Current Itrm:1.5A; Peak Emitter Current:1A; Valley Current Iv:7mA; Power Dissipation Pd:300mW; Operating Temperature Min:-65C; Operating Temperature Max:125C |
| 2N4872 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 50MA I(C) | TO-18 |
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