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參數(shù)資料
型號(hào): 2N4919
廠商: AMERICAN MICROSEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: TO-126, 3 PIN
文件頁數(shù): 1/1頁
文件大小: 237K
代理商: 2N4919
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2N4919 Availability
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2N4919 Information
Category Transistors
2N4919 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 1.0
Absolute Max. Power Diss. (W) : 30
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : 100u
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. : 150
@I(C) (A) (Test Condition) : 500m
@V(CE) (V) (Test Condition) : 1.0
f(T) Min. (Hz) Transition Freq : 3.0M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-126var
Mounting Style : T
Description :
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133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
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相關(guān)PDF資料
PDF描述
2N491B UJT, TO-5
2N491 UJT, TO-5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4919G 功能描述:兩極晶體管 - BJT 3A 60V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4919G 制造商:ON Semiconductor 功能描述:TRANSISTORPNP60V1ATO-225 制造商:ON Semiconductor 功能描述:TRANSISTOR,PNP,60V,1A,TO-225
2N491A 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Diode
2N491B 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Diode
2N492 制造商:TI 功能描述:2N492
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