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參數資料
| 型號： | 2N5058 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 231K |
| 代理商： | 2N5058 |
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2N5058 Information
Category Transistors
2N5058 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 300
V(BR)CBO (V) : 300
I(C) Max. (A) : 150m
Absolute Max. Power Diss. (W) : 1.0
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : 50nШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 35
h(FE) Max. Current gain. : 150
@I(C) (A) (Test Condition) : 30m
@V(CE) (V) (Test Condition) : 25
f(T) Min. (Hz) Transition Freq : 30M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-5
Mounting Style : T
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5059 | 功能描述:兩極晶體管 - BJT Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5060 | 功能描述:SCR 0.8A 30V RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5060/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Sensitive Gate Silicon Controlled Rectifiers |
| 2N5060G | 功能描述:SCR THY 0.8A 30V SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5060RL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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