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參數(shù)資料
| 型號： | 2N5058 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 15K |
| 代理商： | 2N5058 |
2N5058
NPN EPITAXIAL PLANAR
BIPOLAR TRANSISTOR
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
CECC SCREENING OPTIONS
JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
General Purpose Amplifier
High Voltage
VCEO
Collector – Emitter Voltage (IB = 0)
VCBO
Collector – Base Voltage (IE = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC
Collector Current
PD
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
TJ , TSTG
Operating and Storage Junction Temperature Range
300V
7V
150mA
1.0W
6.67mW / °C
5.0W
33.3mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 (TO-205AD) PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base
PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5530
Issue 1
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| 2N5058 | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5059 | 功能描述:兩極晶體管 - BJT Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5060 | 功能描述:SCR 0.8A 30V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5060/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Sensitive Gate Silicon Controlled Rectifiers |
| 2N5060G | 功能描述:SCR THY 0.8A 30V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N5060RL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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