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參數資料
| 型號： | 2N5088 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 281K |
| 代理商： | 2N5088 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2N508
8
2N508
9
Unit
Collector – Emitter Voltage
VCEO
30
25
Vdc
Collector – Base Voltage
VCBO
35
30
Vdc
Emitter – Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
2N5088
2N5089
V(BR)CEO
30
25
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
2N5088
2N5089
V(BR)CBO
35
30
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
2N5088
(VCB = 15 Vdc, IE = 0)
2N5089
ICBO
—
50
nAdc
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
IEBO
—
50
100
nAdc
1. R
θJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
Order this document
by 2N5088/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5088
2N5089
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
相關PDF資料 |
PDF描述 |
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| 2N5089 | 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 2N5088 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5088 | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5089RL | 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5088ZL1 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5088/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Amplifier Transistor NPN |
| 2N5088_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors NPN Silicon |
| 2N5088_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5088_D11Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5088_D26Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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