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參數資料
| 型號： | 2N5308-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 357K |
| 代理商： | 2N5308-BP |
2N5308
NPN Darlington
Transistor
Features
This device is designed for applications requiring extremely high
current gain at current to 1.0A
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current, Continuous
1.2
A
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
625
5.0
mW
mW/
OC
RJC
Thermal Resistance, Junction to Case
83.3
OC/W
RJA
Thermal Resistance, Junction to Ambient
200
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=0.1ìAdc, IE=0)
40
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=0.1ìAdc, IC=0)
12
---
Vdc
ICBO
Collector Cutoff Current
(VCB=40Vdc, IE=0.4Vdc)
(VCB=40Vdc, IE=0, TA=100
OC)
---
0.1
20
uAdc
IEBO
Emitter Cutoff Current
(VEB=12Vdc, IC=0)
---
0.1
nAdc
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
Pin Configuration
Bottom View
B
C
E
TO-92
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
A
E
B
C
D
G
omponents
20736 Marilla
Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2
2003/04/30
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