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參數資料
| 型號： | 2N5308D27Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 525K |
| 代理商： | 2N5308D27Z |
2N5308
Discrete POWER & Signal
Technologies
NPN Darlington Transistor
2N5308
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current - Continuous
1.2
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
2N5308
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
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| 2N5308D74Z | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5309 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SPRINGFIELD, NEW JERSEY 07091 |
| 2N5310 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SPRINGFIELD, NEW JERSEY 07091 |
| 2N5312 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 5A 3PIN TO-61 - Bulk |
| 2N5313 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 20A 3PIN TO-61 - Bulk |
| 2N5314 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 20A 3PIN TO-61 - Bulk |
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