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參數資料
| 型號： | 2N5338 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS |
| 中文描述： | 5安培高速NPN晶體管100伏 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N5338 |
2N5338
Bipolar NPN Device.
V
CEO
= 100V
I
C
= 5A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
100
V
I
C(CONT)
5
A
h
FE
@ 2/2 (V
CE
/ I
C
)
30
120
-
f
t
30M
Hz
P
D
6
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar NPN Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
(0.89
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
(2.54
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3665 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
| 2N5338 | 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS |
| 2N5339 | Chip Type 2C5154 Geometry 9201 Polarity NPN |
| 2N5339 | NPN SILICON TRANSISTOR |
| 2N5339 | 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5338X | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN SILICON TRANSISTORS |
| 2N5338X_01 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN SILICON TRANSISTORS |
| 2N5339 | 功能描述:兩極晶體管 - BJT NPN High Current RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5339_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N5339_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
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