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參數(shù)資料
| 型號： | 2N5339 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS |
| 中文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2N5339 |
Chip Type 2C5154
Geometry 9201
Polarity NPN
Data S heet No. 2C5154
Generic Packaged Parts:
2N4150, 2N51512, 2N5154,
2N5339
Chip type
2C5154
by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
2N3998, 2N3999,
2N4150
,
2N4150S
,
2N5152
,
2N5152L
,
2N5154
,
2N5154L
, 2N5339
APPLICATIONS:
Designed for medium
power amplifier and switching and wide
band amplifier applications.
Features:
Medium power ratings
Top
Al - 37.5 k min.
Au - 6.5 k nom.
12 mils x 40 mils
12 mils x 30 mils
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
100 mils x 100 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter
BV
CBO
I
CES
I
EBO
h
FE
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 10 mA, I
E
= 0
V
CE
= 60 V, I
E
= 0
V
BE
= 4.0 V
C
, I
C
= 0
I
C
= 50 mA dc, V
CE
= 5.0 V
I
C
= 2.5 A dc, V
CE
= 5.0 V
Min
80
---
---
50
70-200
Max
---
1.0
1.0
---
---
Unit
V dc
μA
μA
---
---
Electrical Characteristics
T
A
= 25
o
C
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| 2N5415CSM4 | PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5339_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N5339_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N5339JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N5339LCC4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2N5339U3 | 制造商:Microsemi Corporation 功能描述:2N5339U3 - Bulk |
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