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參數資料
| 型號： | 2N5415-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 22K |
| 代理商： | 2N5415-JQR-B |
ABSOLUTE MAXIMUM RATINGS T
case = 25°c unless otherwise stated
2N5415CSM4
2N5416CSM4
Prelim. 02/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VCBO
Collector – Base Voltage (IE=0)
VCEO(sus)
Collector – Emitter Voltage (IB=0)
VEBO
Emitter – Base Voltage (IC=0)
IC
Collector Current
IB
Base Current
Ptot
Total Device Dissipation at TA 25°C
Tstg
Storage Temperature
TJ
Junction Temperature
Rth-j-amb
Thermal Resistance Junction - Ambient
1A
0.5A
1W
–65 to +200°C
175°C
150°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
4
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009)
rad.
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009)
min.
1.
27
±
0.
05
(0
.05
±
0.
002
)
3.
81
±
0.
13
(0
.15
±
0.
00
5)
0.
64
±
0.
08
(0
.025
±
0.
003)
PNP PLANAR EPITAXIAL TRANSISTOR
IN A HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR HIGH
RELIABILITY APPLICATIONS
FEATURES
Silicon Planar PNP Transistor
Hermetic Ceramic Surface Mount Package
CECC Screening Options
Space quality Options
LCC3 PACKAGE
Underside View
PAD 1 – Collector
PAD 2 – N/C
PAD 3 – Emitter
PAD 4 – Base
2N5415
2N5416
-200V
-4V
-350V
-300V
-6V
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5415CSM4G4 | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N5416CSM4G4 | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N5416CSM4-JQR-B | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N5415 | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5416 | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5415MOT | 制造商:Motorola 功能描述:2N5415 |
| 2N5415S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP LOW POWER SILICON TRANSISTOR |
| 2N5415SJAN | 制造商:Microsemi Corporation 功能描述: |
| 2N5415UA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 200V 1A 4PIN UA - Bulk |
| 2N5416 | 功能描述:兩極晶體管 - BJT PNP Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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