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參數資料
| 型號： | 2N5430 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power Transistors |
| 中文描述： | 7 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 15K |
| 代理商： | 2N5430 |
2N5430
MEDIUM POWER
NPN SILICON TRANSISTOR
Designed for switching and wide - band
amplifier applications
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current – Continuous
Base Current
Total Device Dissipation at T
case
= 25°C
Derate above 25°C
Operating and
Storage Junction Temperature Range
Thermal Resistance, Junction to Case.
T
j
T
stg
R
q
JC
100 V
100 V
6 V
7 A
1 A
40 W
228 mW / °C
–65 to 200°C
4.37 °C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO66 Package.
Pin 1
Pin 2
Case
Base
Emitter
Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase= 25°C unless otherwise stated)
2
2
1
1
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0
0
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
1
1
LA B
S E M E
This product is available screened in
accordance with various military specs.
EG.
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
2N5430CECC–QR–B
Prelim. 1/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk相關PDF資料 |
PDF描述 |
|---|---|
| 2N5430 | POWER TRANSISTORS(7A,40W) |
| 2N5468 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. |
| 2N5469 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
| 2N5551C | Epitaxial Planar NPN Transistor(General Application,High Voltage Application)(外延平面NPN晶體管（通用型，高電壓應用）) |
| 2N5551S | Epitaxial Planar NPN Transistor(General Application,High Voltage Application)(外延平面NPN晶體管（通用型，高電壓應用）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5430X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | TO-213AA |
| 2N5431 | 制造商:Motorola Inc 功能描述: |
| 2N5432 | 功能描述:JFET 25V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5432_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel JFETs |
| 2N5432-2 | 制造商:Vishay Angstrohm 功能描述:Trans JFET N-CH 3-Pin TO-206AC T/R 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-52 - Bulk |
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