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參數資料
| 型號： | 2N5485 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA |
| 文件頁數： | 1/1頁 |
| 文件大小： | 92K |
| 代理商： | 2N5485 |
01/99
2N5484, 2N5485, 2N5486
N-Channel Silicon Junction Field-Effect Transistor
VHF/UHF Amplifiers
Absolute maximum ratings at TA = 25C
Reverse Gate Source Voltage
– 25 V
Reverse Gate Drain Voltage
– 25 V
Continuous Device Power Dissipation
360 mW
Power Derating
3.27 mW/°C
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMP5484, SMP5485, SMP5486
At 25°C free air temperature:
2N5484
2N5485
2N5486
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 25
V
IG = 1A, VDS = V
Gate Reverse Current
IGSS
– 1– 1– 1
nA
VGS = – 20V, VDS = V
– 0.2
A
VGS = – 20V, VDS = V
TA = 100°C
Gate Source Cutoff Voltage
VGS(OFF)
– 0.3
– 3
– 0.5
– 4
– 2
– 6
V
VDS = 15V, ID = 10 nA
Drain Saturation Current (Pulsed)
IDSS
154
10
8
20
mA
VDS = 15V, VGS = V
Dynamic Electrical Characteristics
Forward Transconductance
Re(Yfs)
2500
S
VDS = 15V, VGS = V
f = 100 MHz
3000
3500
S
VDS = 15V, VGS = V
f = 400 MHz
Common Source Forward Transadmittance
Yfs
3000
6000
3500
7000
4000
8000
S
VDS = 15V, VGS = V
f = 1 kHz
Input Admittance
Re(Yis)
100
S
VDS = 15V, VGS = V
f = 100 MHz
1000
S
VDS = 15V, VGS = V
f = 400 MHz
Output Conductance
Re(Yos)
75
S
VDS = 15V, VGS = V
f = 100 MHz
100
S
VDS = 15V, VGS = V
f = 400 MHz
Common Source Output Admittance
Yos
50
60
75
S
VDS = 15V, VGS = V
f = 1 MHz
Common Source Input Capacitance
Ciss
555
pF
VDS = 15V, VGS = V
f = 1 MHz
Common Source Reverse
Crss
111
pF
VDS = 15V, VGS = V
f = 1 MHz
Transfer Capacitance
Output Capacitance
Coss
222
pF
VDS = 15V, VGS = V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-22
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5485_D26Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D26Z_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D27Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D74Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5485_D75Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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