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參數(shù)資料
| 型號： | 2N549 |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5 |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 800mA的一（c）|至5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2N549 |
1997. 5. 13
1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5400
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: V
CBO
=-130V, V
CEO
=-120V
Low Leakage Current.
: I
CBO
=-100nA(Max.) @V
CB
=-100V
Low Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) @I
C
=-50mA, I
B
=-5mA
Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. BASE
3. COLLECTOR
+
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-130
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-600
mA
Base Current
I
B
-100
mA
Collector Power Dissipation
(Ta=25
)
P
C
625
mW
Collector Power Dissipation
(Tc=25
)
P
C
1.5
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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