
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Document Number: 70253
S-04031—Rev. C, 04-Jun-01
www.vishay.com
8-1
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IG Max (pA)
jVGS1 – VGS2j Max (mV)
2N5545
–0.5 to –4.5
–50
1.5
–50
5
2N5546
–0.5 to –4.5
–50
1.5
–50
10
2N5547
–0.5 to –4.5
–50
1.5
–50
15
FEATURES
BENEFITS
APPLICATIONS
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D High CMRR: 100 dB
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
DESCRIPTION
The 2N5545/5546/5547JANTX/JANTXV are monolithic dual
n-channel JFETs designed to provide high input impedance
(IG < 50 pA) for general-purpose differential amplifiers. The
2N5545 features minimum system error and calibration (5 mV
offset maximum).
TO-71
Top View
G1
S1
D1
G2
D2
S2
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
–50 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300
_C
. . . . . . . . . . . . . . . . . . .
Storage Temperature
–65 to 200
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Sidea
250 mW
. . . . . . . . . . . . . . . . . . . . . . . .
Totalb
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/
_C above 25_C
b.
Derate 4 mW/
_C above 25_C