
2N5545/46/47/JANTX/JANTXV
Siliconix
P-37514—Rev. B, 25-Jul-94
1
Monolithic N-Channel JFET Duals
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
G
Max (pA)
V
GS1
– V
GS2
Max (mV)
2N5545
–0.5 to –4.5
–50
1.5
–50
5
2N5546
–0.5 to –4.5
–50
1.5
–50
10
2N5547
–0.5 to –4.5
–50
1.5
–50
15
Features
Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 3 pA
Low Noise
High CMRR: 100 dB
Benefits
Tight Differential Match vs. Current
Improved Op Amp Speed, Settling Time Accuracy
Minimum Input Error/Trimming Requirement
Insignificant Signal Loss/Error Voltage
High System Sensitivity
Minimum Error with Large Input Signal
Applications
Wideband Differential Amps
High-Speed,
Temp-Compensated,
Single-Ended Input Amps
High-Speed Comparators
Impedance Converters
Description
The 2N5545/5546/5547JANTX/JANTXV are monolithic
dual n-channel JFETs designed to provide high input
impedance (I
G
< 50 pA) for general-purpose differential
amplifiers. The 2N5545 features minimum system error
and calibration (5-mV offset maximum).
The TO-71 package is available with full military
processing (see Military Information).
TO-71
Top View
G
1
S
1
D
1
G
2
D
2
S
2
1
2
3
6
5
4
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–50 V
30 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
–65 to 200 C
–55 to 150 C
. . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Side
a
Total
b
250 mW
500 mW
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Notes
a.
b.
Derate 2 mW/ C above 25 C
Derate 4 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70253.