- 您現在的位置：買賣IC網 > PDF目錄369040 > 2N5559 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-3 PDF資料下載
參數資料
| 型號： | 2N5559 |
| 英文描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-3 |
| 中文描述： | 晶體管|晶體管| npn型| 120伏特五（巴西）總裁| 10A條一（c）|至3 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 10K |
| 代理商： | 2N5559 |
2N5551DCSM
Dual Bipolar NPN Devices.
V
CEO
= 160V
I
C
= 0.6A
All Semelab hermetically sealed products can
be processed in accordance with the
requirements of BS, CECC and JAN, JANTX,
JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
160
V
I
C(CONT)
0.6
A
h
FE
@ 5.0/10m (V
CE
/ I
C
)
80
-
f
t
100M
Hz
P
D
0.35
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
Dual Bipolar NPN Devices in
a hermetically sealed
LCC2 Ceramic Surface Mount
Package for High Reliability
Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
6
3
4
5
2
(
0
(
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4
(
LCC2 (MO-041BB)
Pinouts
Pin 1 – Collector 1
Pin 2 – Base 1
Pin 3 – Base 2
Pin 4 – Collector 2
Pin 5 – Emitter 2
Pin 6 – Emitter 1
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5551 | NPN high-voltage transistors |
| 2N5551 | Epitaxial Planar NPN Transistor(General Application,High Voltage Application)(外延平面NPN晶體管（通用型，高電壓應用）) |
| 2N5564 | Matched N-Channel JFET Pairs |
| 2N5565 | Matched N-Channel JFET Pairs |
| 2N5566 | Matched N-Channel JFET Pairs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5560 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 30A 3PIN TO-63 - Bulk |
| 2N5561 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 50V V(BR)DSS | 10MA I(DSS) | TO-71 |
| 2N5562 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 50V V(BR)DSS | 10MA I(DSS) | TO-71 |
| 2N5563 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 50V V(BR)DSS | 10MA I(DSS) | TO-71 |
| 2N5564 | 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。