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參數(shù)資料
| 型號(hào)： | 2N5581JV |
| 廠商： | SEMICOA CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 418K |
| 代理商： | 2N5581JV |
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5581
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N5581J)
JANTX level (2N5581JX)
JANTXV level (2N5581JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching
Low power
NPN silicon transistor
Features
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/423
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Collector-Base Voltage
VCBO
75
Volts
Collector Current, Continuous
IC
800
mA
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
500
2.86
mW
mW/
°C
Power Dissipation, TC = 25°C
Derate linearly above 25
°C
PT
2
11.43
W
mW/
°C
Operating Junction Temperature
TJ
-55 to+200
°C
Storage Temperature
TSTG
-55 to+200
°C
Semicoa Corporation
Copyright
2010
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| 2N5582 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-46 - Bulk |
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| 2N5583 | 制造商:n/a 功能描述:5583 MOT N9H1F 制造商:GENERIC 功能描述: |
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