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參數資料
| 型號： | 2N5630 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數： | 1/6頁 |
| 文件大小： | 253K |
| 代理商： | 2N5630 |
1
Motorola Bipolar Power Transistor Device Data
High-Voltage
High Power
Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
High Collector Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc — 2N5630, 2N6030
VCEO(sus) = 140 Vdc — 2N5631, 2N6031
High DC Current Gain — @ IC = 8.0 Adc
hFE = 20 (Min) — 2N5630, 2N6030
hFE = 15 (Min) — 2N5631, 2N6031
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5630
2N6030
2N5631
2N6031
Unit
Collector–Emitter Voltage
VCEO
120
140
Vdc
Collector–Base Voltage
VCB
120
140
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak
IC
16
20
Adc
Base Current — Continuous
IB
5.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
200
1.14
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.875
_C/W
(1) Indicates JEDEC Registered Data.
200
0
20
40
60
80
100
120
140
200
Figure 1. Power Derating
TC, TEMPERATURE (°C)
150
100
50
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
160
180
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5630/D
Motorola, Inc. 1995
2N5630
2N5631
2N6030
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 –120 –140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
NPN
PNP
REV 7
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6030 | 16 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5631 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5633.MOD | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5634LEADFREE | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5633LEADFREE | 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5631 | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5631/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Voltage High-Power Transistors |
| 2N5631G | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5632 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述: |
| 2N5633 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk |
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