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參數資料
| 型號： | 2N5656 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Silicon NPN Power Transistor(0.5A，20W，300V（集電極-發射極），塑料硅NPN功率晶體管) |
| 中文描述： | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-08, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 131K |
| 代理商： | 2N5656 |
Plastic NPN Silicon
HighVoltage Power Transistor
. . . designed for use in line
operated equipment such as audio
output amplifiers; low
current, high
voltage converters; and AC line
relays.
Excellent DC Current Gain
h
FE
= 30
250 @ I
C
= 100 mAdc
Current
Gain
Bandwidth Product
f
T
= 10 MHz (Min) @ I
C
= 50 mAdc
These devices are available in Pb
free package(s). Specifications herein
apply to both standard and Pb
free devices. Please see our website at
www.onsemi.com for specific Pb
free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
(1) Indicates JEDEC Registered Data.
CEO
CB
T
J
, T
stg
θ
JC
EB
C
Derate above 25 C
0.16
W/ C
Operating and Storage Junction
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
6.25
C/W
40
025
50
75
100
150
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (
°
C)
30
20
10
P
125
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
Figure 2. Sustaining Voltage Test Circuit
50 mH
200
50 V
+
+
X
Y
TO SCOPE
H
g
RELAY
300
1.0
6.0 V
ON Semiconductor
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 8
1
Publication Order Number:
2N5655/D
2N5655
2N5657
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250
350 VOLTS
20 WATTS
CASE 77
09
TO
225AA TYPE
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5657 | 功能描述:兩極晶體管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5657G | 功能描述:兩極晶體管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5658 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-59 - Bulk |
| 2N5659 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-111 - Bulk 制造商: 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 制造商:GENERAL 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 制造商:NJS 功能描述:Bipolar Junction Transistor, NPN Type, TO-111 |
| 2N5660 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 2A 3PIN TO-66 - Bulk |
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