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參數資料
型號: 2N5663
廠商: MICROSEMI CORP
元件分類: 功率晶體管
英文描述: NPN POWER SILICON TRANSISTOR
中文描述: 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-5
封裝: TO-5, 3 PIN
文件頁數: 1/1頁
文件大小: 11K
代理商: 2N5663
2N5663
Bipolar NPN Device.
V
CEO
= 300V
I
C
= 1A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
300
V
I
C(CONT)
1
A
h
FE
@ 5/0.5 (V
CE
/ I
C
)
25
75
-
f
t
20M
Hz
P
D
15
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar NPN Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
(0.89
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
(2.54
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
相關PDF資料
PDF描述
2N4001 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.
2N4001L NPN
2N5665 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
2N5675 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
2N5253 BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE
相關代理商/技術參數
參數描述
2N5663_10 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON POWER NPN TRANSISTOR
2N5663JANTXV 制造商: 功能描述:
2N5663JTXV 制造商: 功能描述:
2N5663SV 制造商: 功能描述:
2N5664 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 5A 3PIN TO-66 - Bulk 制造商:SPC Multicomp 功能描述:BJT NPN 200V 5A TO-66 制造商:SPC Multicomp 功能描述:BJT, NPN, 200V, 5A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:200V; Power Dissipation Pd:52.5W; DC Collector Current:5A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:3
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